一种基于残余电阻的SiC MOSFET栅极退化无关在线结温估计方法

Estimating the junction temperature of silicon carbide (SiC) mosfets plays a crucial role in enhancing their reliability in practical applications. Thermo-sensitive electrical parameters (TSEP) are commonly employed. However, the accuracy of junction temperature estimation using these TSEPs is usually reduced by gate degradation, as their correlation with temperature varies with the extent of gate...