一种用于SiC MOSFET关断延迟检测的新方法及其在在线结温监测中的应用

Traditional methods for detecting turn-off delay times require measuring the drain–source voltage of the device under test. During testing, the measurement circuit must accurately detect the brief low-voltage portion of VDS while withstanding its full high-voltage swing, which presents significant challenges for circuit design. This letter introduces a novel approach for measuring turn-off delay t...