谐振变换器中eGaN HEMT的三电平栅极驱动器

Commercial eGaN HEMT gate drivers focus on high reliability to the strict gate driving voltage against parasitic components. However, they do not consider the high reverse conduction voltage due to the reverse conduction mechanism under ZVS condition. A three-level gate driver is proposed for eGaN control HEMTs. The midlevel voltage reduces the reverse conduction voltage since that the reverse con...