一种用于混合双面冷却GaN模块的“手拉手”动态均流布局

Gallium nitride HEMTs provide exceptional advantages for high-power, space-constrained applications owing to their ultrahigh di/dt and dv/dt capabilities. However, these strengths render them prone to parasitics from layout, making current-sharing between multiple parallel chips difficult. This article develops a parasitic coupling network model for vertical commutation structures, quantitatively ...