基于多晶金刚石的单面冷却SiC MOSFET功率器件增强型热电互连

The silicon carbide (SiC) mosfet has attracted significant attention due to its superior theoretical properties. However, the conventional top-surface interconnect, wire bonding, in power devices is unable to manage heat effectively. Furthermore, the smaller size of the SiC mosfet dies makes the heat spreading problem more severe, thus restricting the operation current. To enhance the thermal perf...