半导体器件中电压驱动的反向恢复：SiC MOSFET的扩散电容视角与行为模型

Reverse recovery is a crucial aspect of switching losses in semiconductor devices. Traditionally, the reverse recovery process is described as the sweeping out of minority carriers stored in the drift region over time. This article proposes that the sweeping out of the carriers can be attributed solely to voltage variation, rather than to the passage of time, representing a capacitive effect terme...