栅极回路电感不匹配对并联SiC MOSFET阈值电压离散性演变及电流分配的影响

For high-capacity applications, paralleling multiple silicon carbide (SiC) metal oxide semiconductor field effect transistors (mosfets) is essential. However, it is challenging to achieve complete symmetry in the gate circuits of parallel devices, resulting in mismatched gate inductances, which may lead to the current imbalance. This article focuses on investigating the evolution of threshold volt...