并联SiC MOSFET不平衡开关电流与损耗的定量分析模型

Uneven dynamic currents between paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) can cause unbalanced switching losses, challenging the circuit reliability. Therefore, it is essential to quantitatively evaluate unbalanced dynamic currents during circuit design and application. However, the existing calculation methods face challenges in modeling or are ...