基于开关瞬态的SiC MOSFET结温估计及老化补偿方法

This article puts forward a novel online method to measure the junction temperature ($T_{j}$) of silicon carbide (SiC) mosfets. In this method, the voltage spikes in the common source stray inductance are captured to obtain the turn-on and turn-off switching transients of SiC mosfets. The switching transients contain useful information pertaining to the temperature and are used to extract the junc...