利用开关振荡幅度特征实现DC-DC变换器中SiC MOSFET开关时间的非接触式监测

The switching time of a silicon carbide metal–oxide–semiconductor field-effect transistor (SiC mosfet) is a crucial parameter that provides valuable insights into the device's operational performance and health status. However, direct measurement of switching time from the drain-source voltage or gate-source voltage may pose challenges in terms of safety and precision. To address these difficultie...