一种降低自热效应的高压饱和区SiC MOSFET增强表征方法

Accurate device modeling, short-circuit prediction, and protection for silicon carbide (SiC) mosfets require accurate measurement of their saturation characteristics under high drain-source voltages. However, conventional curve tracers are limited by power constraints, parasitic elements, and especially the device’s intrinsic turn-on time, which together constrain $di/dt$. This makes it difficult ...