考虑互感耦合的Cu-Clip互连并联SiC MOSFET动态电流均衡解析与优化策略

To enhance the electrical performance and reliability of silicon carbide (SiC) power modules, the study explores Cu-clip as a promising alternative to traditional Al-wire interconnections. SiC power modules, particularly in parallel configurations, encounter challenges in optimizing dynamic current-sharing performance, which limits their maximum current capacity and reliability during switching events. This study proposes an innovative layout design for SiC MOSFET modules, utilizing a coupled parasitic inductance network model to capture better the impact of mutual inductances on dynamic current imbalance. The model derives an equation for equivalent source inductances, accounting for both self-inductance and mutual inductance, providing a foundation for optimizing the layout to minimize dynamic current imbalance. Based on this model, a new Cu-clip structure is designed along with a mathematical analysis aimed at reducing disparities in equivalent source inductances, thereby enhancing dynamic current balancing. The distance between the dies is also increased to mitigate thermal coupling effects. Double-pulse tests and simulations were performed to validate the dynamic current balancing performance of the fabricated power module. The results show a 40% reduction in dynamic current imbalance for the optimized layout (layout B) compared to the baseline configuration (layout A). This work presents a comprehensive solution to improve the dynamic current performance of paralleled SiC MOSFET power modules, offering significant contributions to the design of more efficient and reliable power electronics.