用于GaN HEMT桥式电路串扰抑制的高频三电平栅极驱动器

In order to suppress the crosstalk in gallium nitride (GaN)-based bridge configuration, this article proposes a novel high-frequency three-level gate driver (HFTGD), and the crosstalk suppression with switching frequency up to 5 MHz can be achieved. The capacitor–diode circuit generates a negative voltage to prevent the false turn-on of the device under the impact of positive crosstalk. Pulsewidth...