并联GaN器件误触发振荡的机理分析与抑制

Gallium nitride (GaN) devices are being used more and more due to the advantages of fast switching speed and low on-state resistance. However, these advantages may also cause severe switching oscillations, such as false triggering oscillation. This oscillation can significantly impact system performance by causing overshoot, severe electromagnetic interference, and even device damage. Compared to ...