基于双极扩散方程指数解的平面注入增强型IGBT紧凑模型及其在鲁棒功率变换器设计中的应用

The compact model of an injection enhanced insulated gate bipolar transistors based on the exponential solution of the ambipolar diffusion equation is presented in this paper. To model plasma carrier distribution, an exponential shape function is used, and in steady-state forward bias operation, the plasma carrier concentration has a distribution of catenary form with just two exponential basis fu...