一种基于开通漏源电流过冲的SiC MOSFET结温与封装老化解耦评估方法

Junction temperature and package aging levels are key factors related to the reliability of SiC metal oxide semiconductor field effect transistors (mosfets). Many methods have been proposed to evaluate them for device health management. However, indicators in existing evaluating methods are usually affected by both junction temperature and package aging levels. Thus, these methods can hardly be us...