一种基于开通漏源电流过冲的SiC MOSFET高灵敏度在线结温监测方法

Junction temperature monitoring is the basis of high reliability operation for silicon carbide (SiC) devices, since thermal stress is the dominating aging factor. Conventional thermal sensitive electrical parameter methods have a poor monitoring performance for SiC Mosfets with low sensitivity. Thus, a high-sensitivity online junction temperature monitoring method is proposed based on the turn-on ...