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一种改善Si/SiC混合开关逆变器效率与SiC MOSFET过流应力权衡的变频电流相关开关策略
A Variable-Frequency Current-Dependent Switching Strategy to Improve Tradeoff Between Efficiency and SiC MOSFET Overcurrent Stress in Si/SiC-Hybrid-Switch-Based Inverters
| 作者 | Zishun Peng · Jun Wang · Zeng Liu · Zongjian Li · Yuxing Dai · Guoqiang Zeng · Z. John Shen |
| 期刊 | IEEE Transactions on Power Electronics |
| 出版日期 | 2021年4月 |
| 技术分类 | 功率器件技术 |
| 技术标签 | SiC器件 功率模块 可靠性分析 宽禁带半导体 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | Si/SiC混合开关 SiC MOSFET 过流应力 开关策略 功率效率 可靠性 电力电子 |
语言:
中文摘要
针对Si/SiC混合开关在传统开关策略下,SiC MOSFET在重载工况下承受过流应力导致可靠性下降的问题,本文提出了一种变频电流相关开关策略。该方法在不增加额外功率损耗的前提下,有效缓解了SiC MOSFET在栅极延迟期间的过流应力,提升了混合开关系统的可靠性。
English Abstract
Reliability remains an issue for the Si/SiC hybrid switch adopting the conventional switching strategy of the internal SiC MOSFET that turns on earlier, and off later. Such issue is attributable to the overcurrent stress under the heavy load operating condition, which adversely affects the SiC MOSFET during the gate delay time. To solve this problem without increasing the extra power loss, a novel...
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SunView 深度解读
该技术对阳光电源的组串式逆变器及PowerStack储能系统具有重要价值。随着公司产品向高功率密度和高效率演进,Si/SiC混合开关技术是平衡成本与性能的关键路径。本文提出的变频策略能有效解决混合开关在重载下的可靠性痛点,延长核心功率模块寿命。建议研发团队在下一代高压组串式逆变器及大功率PCS模块设计中,评估该策略在降低SiC器件应力及优化散热设计方面的应用潜力,以进一步提升产品在极端工况下的可靠性。