基于分立器件的高温栅极驱动与保护电路开发

This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon-Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the proposed circuit and a commercial circuit using silicon-on-insulator integrated circuits. To evaluate performance, power tests were conducted up ...