一种具有低寄生电感和高动态均流性能的2.5D多芯片SiC MOSFET功率模块

The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties cannot be achieved in traditional 2-D packaging, and the 3-D packaging manufacturing process is complicated with a necessity for further reliability verification. To solve these problems, a novel 2.5-D wire-bondin...