桥臂电路中同步SiC MOSFET体二极管引起的负偏置阈值电压不稳定性

This article reports a body diode induced negative-bias Vth instability of synchronous SiC mosfet in a bridge-leg circuit. During reverse recovery phase, the holes injected from body diode are swept towards the source/gate side. A portion of holes bombard at the gate oxide, which results in the generation of defects/traps at the gate oxide and the consequent Vth shift. The shift is strongly influe...