面向硬开关应用的GaN/Si混合开关设计与优化：考虑动态导通电阻与功率损耗

For gallium nitride (GaN) devices, the relatively immature process technology and cost still limit the single die size. Thus, it becomes necessary to parallel the GaN devices for the high-power applications including the data center and vehicle. Considering the extremely fast switching speed, it is a challenge to parallel the GaN devices. As a consequence, it is of interest to investigate the solu...