通过分布式栅极阻尼网络优化多芯片SiC堆叠DBC功率模块的开关损耗

To address the escalating risks of parasitic oscillations and high switching losses in multichip paralleled SiC mosfet modules with high device counts, this article proposes a distributed gate damping network featuring integrated high-value embedded resistors (30–40 Ω) in a stacked direct-bonded copper (DBC) package. Unlike conventional single-resistor solutions (<10 Ω), the proposed architecture ...