基于物理的斜角场板GaN HEMT SPICE模型

This article introduces a SPICE-compatible compact model for GaN HEMTs with slant field plates (FPs), implemented using the ASM-HEMT framework. The slant FP geometry, critical for optimizing electric field distribution and breakdown performance, is approximated as a multistep gate FP structure. It is shown that conventional HEMT models using normal gate FPs fail to accurately capture the capacitance behavior of these devices. To address this limitation, a new modeling methodology is developed within the ASM-HEMT framework. This approach ensures accurate simulation of device behavior while maintaining computational efficiency. Validated against TCAD simulations and experimental data, the model demonstrates strong agreement across pulsed I–V, C–V, and large-signal RF load–pull characteristics.