碳化硅MOSFET瞬态解析建模方法简要综述

In the field of assessing and optimizing the switching transient performance of semiconductor devices, analytical modeling methodologies have garnered increasing attention due to their advantages of simplicity, intuition, and practical applicability. Compared to silicon-based power devices of the same power level, the higher switching speed of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) makes their switching transient process highly sensitive to the influence of parasitic parameters in the electrical circuit. This results in the emergence of more complex transient characteristics, posing challenges for the analytical modeling of SiC mosfet switching transient. An overview of the existing analytical modeling methods for analyzing the switching transient of SiC mosfets and diode pair is provided in this paper. Several simplification measures used in the analytical modeling process are introduced, and the existing analytical models are categorized based on their level of simplification, ranging from low to high. Each model's advantages and disadvantages and their suitable applications are compared and evaluated, and the segmented linear model with both high accuracy and practicality is presented in detail. Moreover, this article summarizes and evaluates the modeling methods of the key parameters for SiC mosfet switching transient modeling. In the end, this article discusses the limitations of the existing analytical models for SiC mosfet switching transient and suggests directions for future improvements and developments.