一种改进JFET区描述的SiC功率MOSFET模型

A novel physical model is proposed for the gate voltage V$V$G$\_{\\text{G}}$-controlled depletion layer appearing in the JFET region. A detailed discussion has been done on the effect of the diffusion current, the result of adopting the drift approximation, and the performance of a new two-segment model of electric field dependent electron mobility in the JFET region. A direct connection has been built between the bias dependent current path and the resistance divisions in the undepleted portion of the JFET region. A set of accurate expressions for capacitance components Cds$C\_{\\text{ds}}$, Cgs$C\_{gs}$ and Cgd$C\_{gd}$ have been proposed and demonstrated.