基于多保真度代理模型的抗辐射SiC MOSFET功率器件设计

Semiconductor devices with radiation-hardened performance are essential for aerospace applications, while multi-buffer layer structures (composed of three N-type doped layers with doping concentrations of 5 × 10 16 to 1 × 10 19 cm −3 and thicknesses of 0–2 μm) enhance radiation tolerance through electric field modulation. This structure optimizes the vertical electric field distribution, reducing the peak electric field in the N-drift/N + substrate junction, thereby effectively suppressing radiation-induced current multiplication effects. However, optimizing device structures is a time-consuming process. In this work, we propose a design method for radiation-hardened SiC UMOSFET structures based on the non-stationary layered Kriging model. The model employs a "data-physics" co-driven approach to predict device performance and utilizes sensitivity analysis to determine the relative importance of input parameters on transient peak current. This model could predict the device performance accurately with reduced computing cost of TCAD simulations, which could be used to help reducing the number of simulations and accelerate the structural design process of complexed device.