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储能系统技术 储能系统 SiC器件 ★ 4.0

厚度对物理蒸发TiO2薄膜及其硅基n-TiO2/p-Si异质结结构的光学和电学性能的影响

Role of thickness on the optical and electrical properties of physically evaporated TiO2 thin films and silicon-based n-TiO2/p-Si heterojunction (HJ) configurations

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中文摘要

通过物理蒸发TiO2粉末制备了厚度约为50、100和150 nm的TiO2薄膜及其n-TiO2/p-Si异质结(HJs)。比较了厚度对异质结二极管电学性能及薄膜光学性能的影响。采用扫描电子显微镜(SEM)图像确定了薄膜的形貌粗糙度和颗粒特征。薄膜的紫外-可见光谱显示,随着厚度增加,光学透过率和带隙值降低,而折射率、消光系数和Urbach能量则升高。厚度为50 nm的TiO2薄膜具有相对较高的FOM值,达7.99 × 10–5 Ω−1。通过电流-电压(I–V)以及电容/电导-电压(C/G–V)测量方法,研究了不同厚度异质结的电学特性。计算了异质结的重要二极管参数,包括理想因子(n)、势垒高度(ϕb)、串联电阻(Rs)、界面态密度(Nss)、内建电势(Vbi)和受主浓度(NA)。通过I–V方法确定的HJs的n和ϕb分别为2.27、2.48、2.11和0.61、0.55、0.58。由C–V特性得到的ϕb值分别为0.73、0.62和0.64,高于I–V方法所得结果,且随厚度增加而减小。通过I–V方法计算得到的HJs的Nss分别为2 × 1017、3.33 × 1017和1.09 × 1018 eV−1 cm−2。还研究了异质结的电容-电压/频率(C–V/F)、电导-电压/频率(G–V/F)以及阻抗-频率(Z–F)特性随TiO2层厚度的变化关系。所有测量结果表明,薄膜及异质结的光学和电学性能均受到TiO2层厚度的影响,其中较薄的样品(约50 nm)可能更适用于光电子器件的设计。

English Abstract

TiO 2 thin films of about 50, 100, and 150 nm thicknesses and their n-TiO 2 /p-Si heterojunctions (HJs) were prepared by physical evaporation of TiO 2 powders. The role of thickness on the electrical properties of the HJ diodes and the optical properties of the films were compared. The morphological roughness and granularity of the films were determined by the SEM imaging. UV–vis spectroscopy of the films showed that the optical transmittance and bandgap values decreased with increasing thickness, whilst the refractive index, extinction coefficient, and Urbach energy increased. The 50 nm thick TiO 2 thin film has a relatively high FOM value of 7.99 × 10 –5 Ω −1 . Electrical characteristics of the HJs were studied by current–voltage ( I – V ), and capacitance/conductance–voltage ( C / G – V ) measurements with the thickness variable. Important diode parameters of the HJs such as ideality factor ( \(n\) ), barrier height (ϕ b ), series resistance ( \({R}_{\text{s}}\) ), interface state density ( \({N}_{\text{ss}}\) ), built-in potential ( \({V}_{\text{bi}}\) ), and acceptor density ( \({N}_{\text{A}})\) were calculated. The n and ϕ b of the HJs were determined by the I – V method to be 2.27, 2.48, 2.11 and 0.61, 0.55, 0.58, respectively. The ϕ b values obtained from the C – V properties were 0.73, 0.62 and 0.64, respectively, which were higher than those obtained from the I – V method and decreased with thickness. The \({N}_{\text{ss}}\) of the HJs, calculated by the I – V approach are 2 × 10 17 , 3.33 × 10 17 and 1.09 × 10 18 eV −1 cm −2 , respectively. The capacitance–voltage/frequency ( C – V / F ), conductance–voltage/frequency ( G – V / F ), and impedance–frequency ( Z – F ) characteristics of the HJs were investigated as a function of TiO 2 layer thickness. All measurements showed that the optical and electrical properties of the films and HJs are affected by the thickness of the TiO 2 layer, and that the thinner one (~ 50 nm) may be suitable for optoelectronic device designs.
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SunView 深度解读

该TiO2/Si异质结薄膜研究对阳光电源SiC功率器件封装及光伏逆变器优化具有参考价值。研究表明50nm薄膜具有最优光电特性,界面态密度低至2×10¹⁷eV⁻¹cm⁻²,可启发ST系列储能变流器中SiC器件的钝化层设计,降低界面损耗。异质结势垒调控技术可应用于三电平拓扑的功率半导体优化,提升SG系列逆变器转换效率。薄膜厚度对电学特性的影响规律,为iSolarCloud平台的器件老化预测模型提供理论依据,助力智能运维技术升级。