基于P3HT:PCBM界面的SiC肖特基二极管中势垒非均匀性在宽温度范围内的分析

Research on the metal–semiconductor interface continues due to its significant impact on the electrical characteristics of Schottky diodes. In this study, a Schottky diode with the structure Au/P3HT: PCBM/6H–SiC/Al was fabricated, and its current–voltage characteristics were analyzed over a wide temperature range of 80–375 K. Using these characteristics, the ideality factor ( n ), barrier height ( Φ b ), resistance (Rs), and saturation current ( I o ) parameters of the diode were calculated with the help of the Thermionic emission model, Cheung-Cheung, and Norde functions. The correlation between these parameters was also examined. The Richardson constant ( A *) was determined using the Richardson plot. Furthermore, the barrier inhomogeneity was analyzed based on a Gaussian distribution model. Although the barrier height has an inhomogeneity showing a double Gaussian distribution that varies with temperature, the effect of voltage deformation was determined to be stable at all temperatures.