中压SiC MOSFET功率模块米勒区持续振荡的建模与稳定性分析

Sustained oscillations during the Miller region have been observed in a 10 kV SiC mosfet power module, which can reduce the robustness or even prevent the proper operation of the module. These oscillations become worse with increased parasitic gate-to-baseplate capacitance. However, the underlying oscillation mechanism involving the parasitic capacitance is still unclear in previous studies. To fi...