一种用于降低硬开关条件下SiC MOSFET开关损耗的电流源栅极驱动器

The switching speed of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (mosfets) is limited when using conventional voltage source gate drivers (VSDs) with fixed gate resistance. This article proposes a novel current source gate driver (CSD) for SiC mosfets to reduce switching losses under hard switching conditions. Unlike conventional CSDs that rely on a single inductor, ...