基于N端口测量的SiC功率模块寄生参数提取方法

This article presents a measurement-based methodology focused on the parasitic extraction of RL elements involved in the commutation power loop of silicon carbide (SiC)-based power modules. It can be seen as a closed/semi-closed-box model that considers a set of scattering-parameters (S-Parameters) measurements for a given number of ports (N) externally available in a power module under test. The ...