一种采用双栅极的单片双向GaN-on-AlN/SiC功率晶体管的特性与运行

We demonstrate a novel 650 V/110 mΩ monolithic bidirectional GaN-on-AlN/SiC switch with two Schottky-type gates, which shows back-gating immunity and thus enables straightforward on-chip integration without performance degradation. GaN-based monolithic bidirectional switches (MBDSs) are increasingly reported as a promising option for converter topologies requiring devices with bidirectional voltag...