1700V平面栅SiC MOSFET在栅极开关不稳定性下的退化依赖性分析与建模

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) are becoming increasingly prevalent in various power electronic applications. However, their widespread adoption is hindered by significant reliability issues related to the gate oxide. The threshold voltage drift under alternating gate bias, commonly referred to as gate switching instability (GSI), presents a subst...