栅极电压跌落作为SiC MOSFET在线健康监测的新指标

Due to the poor quality of the silicon carbide / silicon dioxide interface realization and their thin gate oxide layer, SiC mosfets are more susceptible to charge-trapping mechanisms than silicon mosfets. These phenomena are amplified over time, resulting in decreased transistor performance and increased losses. To monitor this aging mechanism, an analog method is proposed to extract a newly disco...