基于平均栅极驱动电流提取的SiC MOSFET在线栅极漏电流监测

Monitoring the gate leakage current is crucial for silicon carbide mosfets, as their gate structure is more fragile than that of Si-based devices. However, the existing gate leakage current monitoring methods still fail to simultaneously achieve high monitoring resolution and compatibility with a flexible gate drive structure. This letter proposes an online gate leakage current monitoring method f...