一种基于开尔文源极SiC MOSFET栅极电压控制的超快低侵入式短路限流方法

In silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) short-circuit fault, large short-circuit current spikes during the delay time of short-circuit protection will increase its risk of damage and accelerate device degradation. This article proposed an ultrafast and low-invasive short-circuit current limiting method by gate voltage control for SiC mosfets with Kelvi...