一种基于内部栅极状态提取的SiC MOSFET栅极开路故障检测方法

Gate open-circuit failure caused by cracking and liftoff of gate bond wires has been demonstrated to be a new failure mode of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets), which can cause serious consequences such as shoot-through fault and gate-oxide breakdown. To enhance the reliability and robustness of SiC mosfets, a fast and accurate detection scheme for ...