一种基于开通栅极电压滤波的SiC MOSFET栅氧化层退化在线监测方法

This letter proposes an SiC mosfet gate oxide degradation monitoring method based on the peak value of the bandpass filtered gate voltage during turn-on transitions. The frequency range of the bandpass filter is determined to ensure a proper sensitivity of the detected peak value to the degradation level. The monitoring circuit is presented, including an analog bandpass filter, a peak detector, an...