基于电压开关瞬态指纹的SiC功率MOSFET栅氧化层退化在线监测建模与分析

In this article, we have investigated the sensing principle and method of gate-oxide degradation of SiC power mosfets based on fingerprints of voltage switching transient. The modeling of the voltage switching rate during the turn-on process related to the oxide trap of SiC power mosfet is established. The method and the model for monitoring the voltage switching rate are proposed based on the cap...