考虑阈值电压不稳定性SiC MOSFET动态分析开关损耗模型

Accurate modeling of switching loss is critical for silicon carbide mosfets as well as power converters. However, previous “static” time-independent models did not consider the impact of gate oxide degradation on switching performance during long-term operation. This article proposes a “dynamic” time-dependent analytical model considering threshold voltage (VTH) instability caused by gate oxide de...