关于单片集成GaN-on-AlN/SiC晶体管的实验研究

The monolithic integration of the GaN-on-Si high-electron-mobility transistors (HEMTs) is challenging since the back-gating effects caused by a common substrate degrade the device's performance. In this article, we introduce novel GaN-on-AlN/SiC power HEMTs. Compared with conventional GaN-on-Si HEMTs, the presented transistors show immunity to back-gating effects, thereby enabling monolithic integ...