一种基于栅极电流检测的SiC MOSFET超快通用短路保护技术

Fast and reliable protection against short-circuit (SC) faults is critically important for the reliable operation of power devices. In this letter, an ultrafast and universal short-circuit protection (SCP) method is proposed for silicon carbide metal–oxide–semiconductor field-effect transistors based on gate current detection. This method exploits the characteristic of the gate current to become n...