一种考虑温度相关反向恢复的SiC MOSFET超宽高温范围分析开关损耗模型

Accurate switching loss prediction is crucial for studying the failure mechanisms of power modules at extremely high temperatures. However, the temperature range of existing loss models for SiC mosfets is below 175 $^\circ$C, which cannot fulfill the requirements of high-temperature applications. This study proposes an analytical switching loss model for SiC mosfets over an extremely wide temperat...