碳化硅MOSFET动态阈值电压漂移的恢复性能研究

The threshold voltage instability of silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (mosfets) has drawn extensive attention. However, there is limited research on the recovery performance of the threshold voltage of SiC mosfets. In this article, the performance and the physical mechanism of the threshold voltage recovery have been studied with experiments and simula...