阈值电压离散度演变对并联SiC MOSFET电流分配的影响

Parallel connection of silicon carbide (SiC) metal oxide semiconductor field effect transistors (mosfets) is an efficient solution for high-capacity power converters. However, a more or less dispersity of the parallel chip parameters is inevitable, which may lead to the current imbalance. Due to the existence of dynamic threshold voltage drift, the dispersity of the threshold voltage of the parall...