集成动态导通电阻全谱扫描与偏移校准的GaN功率器件在线状态监测

Emerging GaN high electron mobility transistors have become a popular choice in high-efficiency, high-speed power circuits, owing to superb switching figure of merits. However, as a new type of power devices, aging/failure mechanisms of such are far less studied than silicon counterparts, making reliability one of the most formidable obstacles towards mass production. To mitigate this, device onli...