考虑动态传输特性和米勒斜坡的SiC MOSFET串扰峰值精确预测方法

Silicon carbide-based metal-oxide-semiconductor field effect transistors (SiC mosfets) have been widely applied due to their lower on-resistance and parasitic parameters compared with silicon devices. However, the unexpected crosstalk phenomenon occurs and could lead to false turn-on or gate-oxide damage of the devices. In this article, an accurate predictive method of crosstalk peaks is proposed ...