具有创纪录雪崩能量密度的1200V SiC结势垒肖特基二极管的高雪崩能力验证

In this letter, high-performance 4H-SiC junction barrier Schottky diodes with state-of-art single-pulse avalanche energy density by adopting recessed anode and termination regions structures have been demonstrated. With effective alleviation of avalanche current crowding effect at the boundary, near uniform distribution of avalanche breakdown was achieved. During the avalanche reliability evaluati...