一种用于高压脉冲电源开关速度和开关损耗计算的SiC MOSFET精确解析模型

Nanosecond output pulse and high efficiency are achieved in high-voltage pulsed power supplies (HVPPSs) by applying silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets), whose switching speed and switching loss are two vital characteristic parameters. However, the existing research on switching characteristics of SiC mosfets is mainly based on the double pulse test ci...